Datasheet > MMBT3906

MMBT3906

更新时间： 2024-12-01 07:07:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	1457K
描述
Complementary Type The NPN Transistor MMBT3904 is Recommended

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中文翻译

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数据手册

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MMBT3906 数据手册

MMBT3906

TRANSISTOR(PNP)

FEATURES

SOT-23

ecommended

z Complementary Type The NPN Transistor MMBT3904 is R

z Epitaxial Planar Die Construction

(3)C

1. BASE

MARKING: 2A

2. EMITTER

2 A

3. COLLECTOR

(1)B

(2)E

MAXIMUM RATINGS (T

a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-40

Unit

-40

-5

Collector Current

-200

200

℃/W

℃

P_C

Total Device Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

R_θJA

T_J

625

150

T_stg

Storage Temperature

-55 ~ +150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBOI_C=-10μA, I_E=0

I_C=-1mA, I_B=0

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

-40

-5

V(BR)

CEO

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)EBOI_E=-10μA, I_C=0

I_CBOV_CB=-40V, I_E=0

I_CEX

-0.1

-50

μA

Collector cut-off current

V_CE=-30V,V_BE(off)=-3V

V_EB=-5V, I_C=0

Emitter cut-off current

I_EBO

-0.1

300

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(sat)

f_T

V_CE=-1V, I_C=-10mA

V_CE=-1V, I_C= -50mA

V_CE=-1V, I_C= -100mA

I_C=-50mA, I_B= -5mA

I_C= -50mA, I_B=-5mA

V_CE=-20V, I_C=-10mA,f=100MHz

V_CC=-3V,V_BE=-0.5V

I_C=-10mA, I_B1=-I_B2=-1mA

V_CC=-3V,I_C=-10mA,

I_B1=-I_B2=-1mA

100

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay Time

-0.3

-0.95

300

MHz

Rise Time

Storage Time

225

Fall Time

FE(1)

CLASSIFICATION OF h

Rank

Range

100-200

200-300

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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