Datasheet > MMBT3906

MMBT3906

更新时间： 2024-12-01 12:34:03

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	149K
描述
Epitaxial planar die construction

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MMBT3906 数据手册

Product specification

KMBT3906^(MMBT3906)

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Epitaxial planar die construction

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector- Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-40

Unit

Collector - Emitter Voltage

Emitter - Base Voltage

-40

-5

Collector Current- Continuous

Collector Dissipation

-0.2

P^C

0.3

Junction and Storage Temperature

T^J, T^stg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

VCBO

VCEO

VEBO

IcBO

Testconditons

Min

Typ

Max

Unit

Collector - base breakdown voltage

Collector - emitter breakdown voltage

Emitter- base breakdown voltage

Collector cut-off current

-40

-5

Ic= -100 ìA IE=0

Ic= -1 mA IB=0

IE= -100 ìA IC=0

VCB= -40 V , IE=0

-0.1

-50

Collector cut-off current

IcEO

VCE= -40 V , VBE(off)=-3V

VEB= -5V , IC=0

Emitter cut-off current

IEBO

-0.1

300

VCE= -1V, IC= -10mA

VCE= -1V, IC= -50mA

100

DC current gain

hFE

Collector- emitter saturation voltage

Base - emitter saturation voltage

Delay time

VCE(sat) IC=-50 mA, IB= -5mA

VBE(sat) IC=-50 mA, IB= -5mA

-0.3

-0.95

VCC=-3.0V,VBE=0.5V

IC=-10mA,IB1=-1.0mA

VCC=-3.0V,IC=-10mA

IB1=IB2=-1.0mA

Rise time

Storage time

225

Fall time

Transition frequency

VCE= -20V, IC= -10mA, f=100MHz

250

MHz

Marking

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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