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MMBF5457LT1 PDF预览

MMBF5457LT1

更新时间: 2024-02-01 12:41:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 107K
描述
JFET - General Purpose Transistor

MMBF5457LT1 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:LEAD FREE, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.18
配置:SINGLE最小漏源击穿电压:25 V
FET 技术:JUNCTION最大反馈电容 (Crss):3 pF
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MMBF5457LT1 数据手册

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Order this document  
by MMBF5457LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
N–Channel  
2 SOURCE  
3
GATE  
3
1 DRAIN  
1
2
MAXIMUM RATINGS  
Rating  
Drain–Source Voltage  
Symbol  
Value  
Unit  
Vdc  
CASE 31808, STYLE 10  
SOT23 (TO236AB)  
V
DS  
25  
25  
25  
10  
Drain–Gate Voltage  
V
DG  
Vdc  
Reverse Gate–Source Voltage  
Gate Current  
V
GS(r)  
Vdc  
I
G
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
A
= 25°C  
Derate above 25°C  
1.8  
556  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
MMBF5457LT1 = 6D  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Gate–Source Breakdown Voltage  
V
25  
Vdc  
(BR)GSS  
(I = 10 µAdc, V  
= 0)  
G
DS  
Gate Reverse Current  
I
nAdc  
GSS  
(V  
GS  
(V  
GS  
= 15 Vdc, V  
= 15 Vdc, V  
= 0)  
1.0  
200  
DS  
DS  
= 0, T = 100°C)  
A
Gate Source Cutoff Voltage  
(V = 15 Vdc, I = 10 nAdc)  
V
0.5  
6.0  
Vdc  
Vdc  
GS(off)  
DS  
Gate Source Voltage  
(V = 15 Vdc, I = 100 µAdc)  
D
V
GS  
2.5  
DS  
D
ON CHARACTERISTICS  
(2)  
Zero–Gate–Voltage Drain Current  
I
1.0  
5.0  
mAdc  
DSS  
(V  
DS  
= 15 Vdc, V  
= 0)  
GS  
1. FR5 = 1.0  
0.75 0.062 in.  
2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%.  
Thermal Clad is a trademark of the Bergquist Company  
Motorola, Inc. 1996  

MMBF5457LT1 替代型号

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