生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.14 |
配置: | SINGLE | 最小漏源击穿电压: | 25 V |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 3 pF |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.225 W |
最大功率耗散 (Abs): | 0.225 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MMBF5457L | MOTOROLA |
功能相似 |
25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-07, 3 PIN | |
MMBF5457LT1G | ONSEMI |
功能相似 |
JFET - General Purpose Transistor N-Channel | |
MMBF5457LT1 | ONSEMI |
功能相似 |
JFET - General Purpose Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBF5457LT1G | ONSEMI |
获取价格 |
JFET - General Purpose Transistor N-Channel | |
MMBF5457LT3 | MOTOROLA |
获取价格 |
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO | |
MMBF5457LT3 | ONSEMI |
获取价格 |
25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-08, 3 PIN | |
MMBF5457S62Z | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBF5457S62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
MMBF5458 | ONSEMI |
获取价格 |
N 沟道通用放大器 | |
MMBF5458 | FAIRCHILD |
获取价格 |
N-Channel General Purpose Amplifier | |
MMBF5458D87Z | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBF5458D87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
MMBF5458-HIGH | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AA |