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MMBF5457LT1G PDF预览

MMBF5457LT1G

更新时间: 2024-11-28 04:14:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 56K
描述
JFET - General Purpose Transistor N-Channel

MMBF5457LT1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:LEAD FREE, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.18
配置:SINGLE最小漏源击穿电压:25 V
FET 技术:JUNCTION最大反馈电容 (Crss):3 pF
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MMBF5457LT1G 数据手册

 浏览型号MMBF5457LT1G的Datasheet PDF文件第2页浏览型号MMBF5457LT1G的Datasheet PDF文件第3页浏览型号MMBF5457LT1G的Datasheet PDF文件第4页浏览型号MMBF5457LT1G的Datasheet PDF文件第5页浏览型号MMBF5457LT1G的Datasheet PDF文件第6页 
MMBF5457LT1  
Preferred Device  
JFET − General Purpose  
Transistor  
N−Channel  
http://onsemi.com  
Features  
Pb−Free Package is Available  
2 SOURCE  
3
GATE  
MAXIMUM RATINGS  
Rating  
Drain−Source Voltage  
Drain−Gate Voltage  
Symbol  
Value  
25  
Unit  
Vdc  
V
DS  
DG  
1 DRAIN  
V
25  
Vdc  
Reverse Gate−Source Voltage  
Gate Current  
V
−25  
10  
Vdc  
GS(r)  
I
mAdc  
G
3
THERMAL CHARACTERISTICS  
Characteristic  
SOT−23 (TO−236)  
CASE 318  
Symbol  
Max  
Unit  
1
STYLE 10  
Total Device Dissipation FR5 Board  
(Note 1)  
P
225  
mW  
D
2
(T = 25°C  
Derate above 25°C  
A
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
556  
MARKING DIAGRAM  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
6 M G  
G
1
1. FR5 = 1.0 0.75 0.062 in.  
6
= Specific Device Code  
= Date Code*  
= Pb−Free Package  
M
G
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBF5457LT1  
SOT−23  
3000/Tape & Reel  
MMBF5457LT1G  
SOT−23  
3000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
July, 2005 − Rev. 4  
MMBF5457LT1/D  
 

MMBF5457LT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBF5457LT1 ONSEMI

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