生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.64 | 配置: | SINGLE |
最小漏源击穿电压: | 25 V | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 3 pF | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.225 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBF5457S62Z | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBF5457S62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
MMBF5458 | ONSEMI |
获取价格 |
N 沟道通用放大器 | |
MMBF5458 | FAIRCHILD |
获取价格 |
N-Channel General Purpose Amplifier | |
MMBF5458D87Z | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBF5458D87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
MMBF5458-HIGH | TI |
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N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AA | |
MMBF5458L99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
MMBF5458S62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
MMBF5459 | FAIRCHILD |
获取价格 |
N-Channel General Purpose Amplifier |