MMBD6050-T1

更新时间： 2024-11-12 04:39:31

品牌	Logo	应用领域
WTE		整流二极管开关光电二极管
页数	文件大小	规格书
3页	40K
描述
SURFACE MOUNT FAST SWITCHING DIODE

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中文翻译

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数据手册

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MMBD6050-T1 数据手册

WTE

POWER SEMICONDUCTORS

MMBD6050

SURFACE MOUNT FAST SWITCHING DIODE

Features

High Conductance

Fast Switching

Surface Mount Package Ideally Suited for

Automatic Insertion

For General Purpose and Switching

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOT-23

Min

Dim

Max

0.51

1.40

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

0.37

1.19

2.10

0.89

0.45

1.78

2.65

0.013

0.89

0.45

0.076

Mechanical Data

Case: SOT-23, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 0.008 grams (approx.)

Mounting Position: Any

Marking: T2

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 3

All Dimensions in mm

TOP VIEW

Maximum Ratings ^@T_A^{=25°C unless otherwise specified}

Characteristic

Continuous Reverse Voltage

Symbol

V^R

Value

Unit

Average Rectified Output Current (Note 1)

I^O

200

Peak Forward Surge Current (Note 1)

Power Dissipation (Note 1)

@ t < 1.0µs

I^FSM

2.0

P^d

350

°C/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JA

T^j, T^STG

357

-65 to +150

Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Reverse Breakdown Voltage

Symbol

Min

Max

Unit

Test Condition

@ I^R= 100µA

V^(BR)R

—

0.55

0.85

0.7

1.1

@ I^F= 1.0mA

@ I^F= 100mA

Forward Voltage

V^F

Reverse Leakage Current

Junction Capacitance

I^R

C^j

—

0.1

2.5

µA

@ V^R= 50V

V^R= 0V, f = 1.0MHz

I^F= I^R= 10mA,

Reverse Recovery Time

t^rr

—

4.0

I^RR= 0.1 x I^R, R^L= 100ꢀ

Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.

MMBD6050

1 of 3

12 3

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