Datasheet > MMBD6100

MMBD6100

更新时间： 2024-11-11 22:29:11

品牌	Logo	应用领域
智威 - ZOWIE		二极管开关
页数	文件大小	规格书
2页	52K
描述
MONOLITHIC DUAL SWITCHING DIODE

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中文翻译

获取价格

数据手册

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MMBD6100 数据手册

Zowie Technology Corporation

Monolithic Dual Switching Diode

ANODE

CATHODE

MMBD6100

ANODE

SOT-23

MAXIMUM RATINGS

Value

Symbol

Unit

Vdc

Rating

Reverse Voltage

Peak Forward Current

200

500

mAdc

Peak Forward Surge Current

IFM( surge )

THERMAL CHARACTERISTICS

Max.

Symbol

Unit

Characteristic

Total Device Dissipation FR-5 Board⁽¹⁾TA=25^oC

225

1.8

Derate above 25^oC

mW / ^oC

Thermal Resistance, Junction to Ambient

556

^oC / W

Total Device Dissipation Alumina Substrate,⁽²⁾TA=25^oC

300

2.4

Derate above 25^oC

mW / ^oC

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

417

^oC / W

^oC

TJ,TSTG

-55 to +150

DEVICE MARKING

MMBD6100=5BM

ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted) (EACH DIODE)

Max.

Symbol

Min.

Unit

Vdc

Characteristic

OFF CHARACTERISTICS

Reverse Breakdown Voltage

( IBR=100uAdc )

V(BR)

( IF=1.0 mAdc )

( IF=100 mAdc )

550

850

700

1100

Forward Voltage

mVdc

uAdc

Reverse Voltage Leakage Current (VR=50 Vdc )

0.1

Diode Capacitance

( VR=0, f=1.0MHZ )

trr

2.5

4.0

Reverse Recovery Time

( IF=IR=10 mAdc, IR(REC)=1.0mAdc )

(1) FR-5=1.0 0.75 0.062in.

(2) Alumina=0.4 0.3 0.024in. 99.5% alumina.

REV. : 0

Zowie Technology Corporation

中文翻译

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