Datasheet > MMBD6100

MMBD6100

更新时间： 2024-09-23 04:39:31

品牌	Logo	应用领域
WTE		二极管开关
页数	文件大小	规格书
3页	40K
描述
SURFACE MOUNT FAST SWITCHING DIODE

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中文翻译

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数据手册

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MMBD6100 数据手册

WTE

POWER SEMICONDUCTORS

MMBD6100

SURFACE MOUNT FAST SWITCHING DIODE

Features

High Conductance

Fast Switching

Surface Mount Package Ideally Suited for

Automatic Insertion

For General Purpose and Switching

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOT-23

Min

Dim

Max

0.51

1.40

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

0.37

1.19

2.10

0.89

0.45

1.78

2.65

0.013

0.89

0.45

0.076

Mechanical Data

Case: SOT-23, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 0.008 grams (approx.)

Mounting Position: Any

Marking: T4

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 3

All Dimensions in mm

TOP VIEW

Maximum Ratings ^@T_A^{=25°C unless otherwise specified}

Characteristic

Continuous Reverse Voltage

Symbol

V^R

Value

Unit

Average Rectified Output Current (Note 1)

I^O

200

Peak Forward Surge Current (Note 1)

Power Dissipation (Note 1)

@ t < 1.0µs

I^FSM

2.0

P^d

350

°C/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JA

T^j, T^STG

357

-65 to +150

Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Reverse Breakdown Voltage

Symbol

Min

Max

Unit

Test Condition

@ I^R= 100µA

V^(BR)R

—

0.55

0.85

0.7

1.1

@ I^F= 1.0mA

@ I^F= 100mA

Forward Voltage

V^F

Reverse Leakage Current

Junction Capacitance

I^R

C^j

—

0.1

2.5

µA

@ V^R= 50V

V^R= 0V, f = 1.0MHz

I^F= I^R= 10mA,

Reverse Recovery Time

t^rr

—

4.0

I^RR= 0.1 x I^R, R^L= 100ꢀ

Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.

MMBD6100

1 of 3

12 3

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