Datasheet > MMBD6100LT1_06

MMBD6100LT1_06

更新时间： 2024-11-12 04:39:31

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关
页数	文件大小	规格书
3页	53K
描述
Monolithic Dual Switching Diode

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中文翻译

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数据手册

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MMBD6100LT1_06 数据手册

MMBD6100LT1

Monolithic Dual

Switching Diode

Features

• Pb−Free Packages are Available

http://onsemi.com

MAXIMUM RATINGS (EACH DIODE)

Rating

ANODE

Symbol

Value

Unit

Vdc

CATHODE

ANODE

Reverse Voltage

Forward Current

200

500

mAdc

Peak Forward Surge Current

FM(surge)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation, FR−5 Board

(Note 1)

T = 25°C

225

1.8

mW/°C

Derate above 25°C

SOT−23

CASE 318

STYLE 9

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina Substrate

(Note 2)

T = 25°C

300

2.4

mW/°C

Derate above 25°C

DEVICE MARKING

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range

417

°C/W

°C

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

5B M G

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

= Specific Device Code

= Date Code*

= Pb−Free Package

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Characteristic

OFF CHARACTERISTICS

Reverse Breakdown Voltage

Symbol Min Max

Unit

−

Vdc

(BR)

= 100 mAdc)

(BR)

ORDERING INFORMATION

Reverse Voltage Leakage Current

0.1

mAdc

(V = 50 Vdc)

(For each individual diode while the

second diode is unbiased)

†

Device

Package

Shipping

3000/Tape & Reel

MMBD6100LT1

SOT−23

Forward Voltage

Vdc

MMBD6100LT1G SOT−23

(Pb−Free)

(I = 1.0 mAdc)

0.7

1.1

0.55

0.8

(I = 100 mAdc)

MMBD6100LT3

SOT−23 10,000/Tape & Reel

Reverse Recovery Time

−

4.0

(I = I = 10 mAdc, I = 1.0 mAdc)

(Figure 1)

R(REC)

MMBD6100LT3G SOT−23 10,000/Tape & Reel

(Pb−Free)

Capacitance

(V = 0 V)

−

2.5

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 2

MMBD6100LT1/D

12 3

中文翻译

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与MMBD6100LT1_06相关器件

型号	品牌	获取价格	描述	数据表
MMBD6100LT1G	ONSEMI	获取价格	Monolithic Dual Switching Diode
MMBD6100LT1G_09	ONSEMI	获取价格	Monolithic Dual Switching Diode
MMBD6100LT3	ONSEMI	获取价格	Monolithic Dual Switching Diode
MMBD6100LT3G	ONSEMI	获取价格	Monolithic Dual Switching Diode
MMBD6100-T1	WTE	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
MMBD6100-T1-LF	WTE	获取价格	暂无描述
MMBD6100W	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
MMBD6100W_09	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
MMBD6100W_13	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
MMBD6100W_R1_00001	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES

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