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MMBD6050-V PDF预览

MMBD6050-V

更新时间: 2024-11-12 05:49:19
品牌 Logo 应用领域
威世 - VISHAY 小信号开关二极管
页数 文件大小 规格书
6页 117K
描述
Small Signal Switching Diode

MMBD6050-V 数据手册

 浏览型号MMBD6050-V的Datasheet PDF文件第2页浏览型号MMBD6050-V的Datasheet PDF文件第3页浏览型号MMBD6050-V的Datasheet PDF文件第4页浏览型号MMBD6050-V的Datasheet PDF文件第5页浏览型号MMBD6050-V的Datasheet PDF文件第6页 
MMBD6050-V  
Vishay Semiconductors  
Small Signal Switching Diode  
Features  
• Silicon Epitaxial Planar Diode  
3
• Fast switching diode in case SOT-23,  
e3  
especially suited for automatic insertion.  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
1
2
16923  
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
MMBD6050-V  
MMBD6050-V-GS18 or MMBD6050-V-GS08  
5AM  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VR  
Value  
70  
Unit  
Continuous reverse voltage  
V
Forward current  
IF  
200  
500  
225  
mA  
mA  
mW  
Peak forward surge current  
IFSM  
Ptot  
Maximum power dissipation  
on FR-5 board 1)  
TA = 25 °C  
Derate above 25 °C  
TA = 25 °C  
Ptot  
Ptot  
1.8  
mW/°C  
mW  
Maximum power dissipation  
on Alumina substrate 2)  
300  
Derate above 25 °C  
Ptot  
2.4  
mW/°C  
1) FR-5 = 1.0 x 0.75 x 0.062 in.  
2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5 % alumina  
Document Number 85735  
Rev. 1.3, 07-Apr-05  
www.vishay.com  
1

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