Datasheet > MMBD6100

MMBD6100

更新时间： 2024-09-24 14:53:51

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
2页	179K
描述
小信号开关二极管

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBD6100 数据手册

MMBD6100

Silicon Epitaxial Planar Switching Diode

Features

• Small package

• Low forward voltage

• Fast reverse recovery time

• Small total capacitance

Marking Code: A4

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

Forward Current

I_F

200

300

Maximum Peak Forward Current

I_FM

Non-Repetitive Peak Forward Surge Current

at t = 1 s

at t = 1 µs

I_FSM

Power Dissipation

P_tot

R_θJA

300

417

Thermal Resistance Junction to Ambient Air

Junction and Storage Temperature Range

°C/W

T_j, T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at I_F= 1 mA

at I_F= 100 mA

V_F

0.55

0.85

0.7

1.1

Reverse Current

at V_R= 50 V

I_R

V_(BR)R

C_T

0.1

μA

Reverse Breakdown Voltage

at I_R= 100 µA

Total Capacitance

at V_R= 0

2.5

Reverse Recovery Time

at I_F= I_R= 10 mA

t_rr

Dated : 23/11/2015 Rev:03

中文翻译

下载PDF

与MMBD6100相关器件

型号	品牌	获取价格	描述	数据表
MMBD6100_09	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
MMBD6100L	MOTOROLA	获取价格	2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, CASE 318-07, 3 PIN
MMBD6100LT1	ONSEMI	获取价格	Monolithic Dual Switching Diode
MMBD6100LT1	LRC	获取价格	Monolithic Dual Switching Diodes
MMBD6100LT1	MOTOROLA	获取价格	Monolithic Dual Switching Diodes
MMBD6100LT1_06	ONSEMI	获取价格	Monolithic Dual Switching Diode
MMBD6100LT1G	ONSEMI	获取价格	Monolithic Dual Switching Diode
MMBD6100LT1G_09	ONSEMI	获取价格	Monolithic Dual Switching Diode
MMBD6100LT3	ONSEMI	获取价格	Monolithic Dual Switching Diode
MMBD6100LT3G	ONSEMI	获取价格	Monolithic Dual Switching Diode