Datasheet > MMBD6100

MMBD6100

更新时间： 2024-11-13 14:53:51

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
2页	179K
描述
小信号开关二极管

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中文翻译

获取价格

数据手册

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MMBD6100 数据手册

MMBD6100

Silicon Epitaxial Planar Switching Diode

Features

• Small package

• Low forward voltage

• Fast reverse recovery time

• Small total capacitance

Marking Code: A4

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

Forward Current

I_F

200

300

Maximum Peak Forward Current

I_FM

Non-Repetitive Peak Forward Surge Current

at t = 1 s

at t = 1 µs

I_FSM

Power Dissipation

P_tot

R_θJA

300

417

Thermal Resistance Junction to Ambient Air

Junction and Storage Temperature Range

°C/W

T_j, T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at I_F= 1 mA

at I_F= 100 mA

V_F

0.55

0.85

0.7

1.1

Reverse Current

at V_R= 50 V

I_R

V_(BR)R

C_T

0.1

μA

Reverse Breakdown Voltage

at I_R= 100 µA

Total Capacitance

at V_R= 0

2.5

Reverse Recovery Time

at I_F= I_R= 10 mA

t_rr

Dated : 23/11/2015 Rev:03

中文翻译

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