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MMBD4148WT-T PDF预览

MMBD4148WT-T

更新时间: 2024-11-20 13:11:39
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 156K
描述
Rectifier Diode,

MMBD4148WT-T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.67JESD-609代码:e0
湿度敏感等级:1端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

MMBD4148WT-T 数据手册

 浏览型号MMBD4148WT-T的Datasheet PDF文件第2页浏览型号MMBD4148WT-T的Datasheet PDF文件第3页浏览型号MMBD4148WT-T的Datasheet PDF文件第4页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
MMBD4148  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
·
Low Current Leakage  
Low Cost  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
350mW 100 Volt  
Silicon Epitaxial Diode  
·
·
3
Moisture Sensitivity Level 1  
Pin Configuration  
Top View  
SOT-23  
A
1
2
D
Marking : KA2, A2  
B
C
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
F
E
Maximum Thermal Resistance; 357K/W Junction To Ambient  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
H
G
J
Reverse Voltage  
Peak Reverse  
Voltage  
VR  
75V  
VRM  
100V  
DIMENSIONS  
MM  
Average Rectified  
Current  
Power Dissipation  
Junction  
Temperature  
Peak Forward Surge  
Current  
IO  
150mA Resistive Load  
f > 50Hz  
350mW  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
PTOT  
TJ  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
150°C  
IFSM  
VF  
IR  
1A  
t=1s,Non-Repetitive  
F
G
H
J
Maximum  
.085  
.37  
K
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
.855V  
25nA  
IFM = 10mA;  
TJ = 25°C*  
Suggested Solder  
Pad Layout  
TJ = 25°C  
VR = 20 V  
.031  
.800  
.035  
.900  
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
CJ  
Trr  
2pF  
4nS  
Measured at  
1.0MHz, VR=0V  
IF=10mA  
.079  
2.000  
inches  
mm  
VR = 6V  
RL=100Ω  
.037  
.950  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
.037  
.950  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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