Datasheet > MMBD4301D

MMBD4301D

更新时间： 2024-11-19 14:55:47

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	228K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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MMBD4301D 数据手册

MMBD4301D

Low Capacitance Diode Array

for ESD Protection

Features

• Low Capacitance

• Single Package Integration Design

• Ensures Data Line Speed and Integrity

• Fewer Components and Less Board Space

1. I/O 2. V_N3. I/O

4. I/O 5. V_P6. I/O

Marking Code: FG

SOT-26 Plastic package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

V_RRM

V_R

Continuous Forward Current

I_F

200

450

500

715

Repetitive Peak Forward Current

Maximum Peak Forward Current

Average Forward Current ¹⁾

I_FRM

I_FM

I_F(AV)

Non-Repetitive Peak Forward Surge Current

at t = 1 µs

at t = 1 ms

at t = 1 s

0.5

I_FSM

ESD Voltage (HBM)

Air

Contact

V_ESD

Thermal Resistance from Junction to Ambient

Junction Temperature

C/W

R_θJA

T_j

556

- 40 to + 150

- 55 to + 150

Storage Temperature Range

T_stg

¹⁾FR−5 = 1.0 ╳ 0.75 ╳ 0.062 in.

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_BR= 100 μA

Forward Voltage

at I_F= 1 mA

at I_F= 10 mA

715

855

V_F

at I_F= 50 mA

at I_F= 150 mA

1000

1250

Reverse Current

at V_R= 70V

at V_R= 25 V, T_j= 150℃

2.5

I_R

μA

at V_R= 70 V, T_j= 150℃

Diode Capacitance

at V_R= 0 V, f = 1 MHz , Between I/O Pins

at V_R= 0 V, f = 1 MHz , Between I/O Pin and Ground

C_d

1.5

Dated: 14/09/2018 Rev : 01

12 3

中文翻译

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