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MMBD4448 PDF预览

MMBD4448

更新时间: 2024-11-22 14:55:35
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1373K
描述
SOT-23

MMBD4448 数据手册

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GSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Diodes  
MMBD4448 SWITCHING DIODE  
SOT-23  
FEATURES  
z
z
z
z
Fast switching speed  
Surface mount package ideally suited for automatic insertion  
For general purpose switching applications  
High conductance  
1
2
3
MARKING: KA3  
KA3  
KA3 = Device code  
Solid dot = Green molding compound device.  
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25  
Parameter  
Symbol  
VRM  
Limit  
Unit  
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
100  
V
VRRM  
VRWM  
VR  
75  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
53  
V
Forward Continuous Current  
Average Rectified Output Current  
500  
250  
mA  
mA  
IO  
Non-Repetitive PeakForward Surge Current @t=8.3ms  
IFSM  
A
2.0  
Power Dissipation  
mW  
Pd  
350  
357  
RθJA  
Thermal Resistance from Junction to Ambient  
Operation Junction and Storage Temperature Range  
/W  
TJ,TSTG  
-55 ~+150  
Electrical Ratings @Ta=25  
Parameter  
Symbol  
VF1  
Min.  
0.62  
Typ.  
Max. Unit  
Conditions  
IF=5mA  
V
V
0.72  
0.855  
1.0  
VF2  
IF=10mA  
IF=100mA  
IF=150mA  
VR=75V  
Forward voltage  
VF3  
V
VF4  
V
1.25  
IR1  
µA  
nA  
pF  
2.5  
25  
4
Reverse current  
IR2  
VR=20V  
Capacitance between terminals  
CT  
VR=0V,f=1MHz  
IF=IR=10mA  
trr  
ns  
Reverse recovery time  
4
Irr=0.1XIR,RL=100Ω  
www.jscj-elec.com  
1
Rev. - 2.1  

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