Datasheet > MJW16018

MJW16018

更新时间： 2024-11-22 22:30:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	369K
描述
NPN Silicon Power Transistors

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MJW16018 数据手册

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SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

POWER TRANSISTORS

10 AMPERES

1.5 kV SWITCHMODE Series

800 VOLTS

125 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in

inductive circuits where fall time is critical. They are particularly suited for

line–operated switchmode applications.

Typical Applications:

Features:

•

Switching Regulators

Inverters

Solenoids

Relay Drivers

Motor Controls

Deflection Circuits

•

Collector–Emitter Voltage — V = 1500 Vdc

CEV

Fast Turn–Off Times

80 ns Inductive Fall Time — 100 C (Typ)

110 ns Inductive Crossover Time — 100 C (Typ)

4.5 µs Inductive Storage Time — 100 C (Typ)

100 C Performance Specified for:

Reverse–Biased SOA with Inductive Load

Switching Times with Inductive Loads

Saturation Voltages

•

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJ16018

MJW16018

800

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter–Base Voltage

CEO(sus)

CEV

1500

Collector Current — Continuous

(1)

CASE 1–07

TO–204AA

MJ16018

— Peak

Base Current — Continuous

Adc

(1)

— Peak

Total Power Dissipation

@ T = 25 C

175

100

125

Watts

@ T = 100 C

Derate above T = 25 C

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to 200

–55 to 150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

θJC

CASE 340F–03

TO–247AE

MJW16018

Lead Temperature for Soldering

Purposes: 1/8″ from Case for

5 Seconds

275

(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

REV 1

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12 3 4 5 6 7 8

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MJW16018 替代型号

型号	品牌	替代类型	描述	数据表
2SC3621	TOSHIBA	功能相似	NPN EPITAXIAL TYPE (COLOR TV VERT. DEFLECTION,CLASS B SOUND OUTPUT APPLICATIONS)
2SC3423	TOSHIBA	功能相似	NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
2SC5002	SANKEN	功能相似	Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switch

与MJW16018相关器件

型号	品牌	获取价格	描述	数据表
MJW16110	MOTOROLA	获取价格	POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS
MJW16110	ONSEMI	获取价格	NPN Silicon Power Transistors
MJW16206	MOTOROLA	获取价格	POWER TRANSISTORS 12 AMPERES 1200 VOLTS - VCES 50 and 150 WATTS
MJW16206	ONSEMI	获取价格	POWER TRANSISTORS
MJW16206	ISC	获取价格	Silicon NPN Power Transistors
MJW16206	SAVANTIC	获取价格	Silicon NPN Power Transistors
MJW16210	MOTOROLA	获取价格	15A, 500V, NPN, Si, POWER TRANSISTOR, TO-247
MJW16212	MOTOROLA	获取价格	POWER TRANSISTOR 10 AMPERES 1500 VOLTS - VCES 50 AND 150 WATTS
MJW16212	ONSEMI	获取价格	POWER TRANSISTOR
MJW18020	ONSEMI	获取价格	NPN Silicon Power Transistors High Voltage Planar

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