5秒后页面跳转
捷配首页

Datasheet > MJW16212
MJW16212 PDF预览

MJW16212

更新时间： 2024-11-22 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 264K
描述
POWER TRANSISTOR

阅读下载

中文翻译

获取价格

MJW16212 数据手册

 浏览型号MJW16212的Datasheet PDF文件第2页浏览型号MJW16212的Datasheet PDF文件第3页浏览型号MJW16212的Datasheet PDF文件第4页浏览型号MJW16212的Datasheet PDF文件第5页浏览型号MJW16212的Datasheet PDF文件第6页浏览型号MJW16212的Datasheet PDF文件第7页 
Order this document  
by MJW16212/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Deflection Transistor  
For High and Very High Resolution Monitors  
The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It  
is specifically designed for use in horizontal deflection circuits for 20 mm diameter  
neck, high and very high resolution, full page, monochrome monitors.  
*Motorola Preferred Device  
POWER TRANSISTOR  
10 AMPERES  
•
•
•
•
1500 Volt Collector–Emitter Breakdown Capability  
Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)  
Application Specific State–of–the–Art Die Design  
Fast Switching:  
1500 VOLTS – V  
50 AND 150 WATTS  
CES  
200 ns Inductive Fall Time (Typ)  
2000 ns Inductive Storage Time (Typ)  
•
Low Saturation Voltage:  
0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive  
Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — V  
High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —  
8.0 Volts (Min)  
•
•
CES  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
1500  
650  
Unit  
Vdc  
Vdc  
Vdc  
V
Collector–Emitter Breakdown Voltage  
Collector–Emitter Sustaining Voltage  
Emitter–Base Voltage  
V
CES  
V
CEO(sus)  
V
EBO  
8.0  
RMS Isolation Voltage (2)  
(for 1 sec, T = 25 C,  
A
Rel. Humidity < 30%)  
V
ISOL  
Per Fig. 14  
Per Fig. 15  
—
—
Collector Current — Continuous  
Collector Current — Pulsed (1)  
I
10  
15  
Adc  
Adc  
C
I
CM  
Base Current — Continuous  
Base Current — Pulsed (1)  
I
5.0  
10  
B
I
BM  
CASE 340K–01  
TO–247AE  
Maximum Repetitive Emitter–Base  
Avalanche Energy  
W (BER)  
0.2  
mJ  
Total Power Dissipation @ T = 25 C  
P
150  
39  
1.49  
Watts  
C
D
Total Power Dissipation @ T = 100 C  
C
Derated above T = 25 C  
C
W/ C  
C
Operating and Storage Temperature Range  
T , T  
J
–55 to 125  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
0.67  
275  
Unit  
C/W  
C
Thermal Resistance — Junction to Case  
R
θJC  
Lead Temperature for Soldering Purposes  
1/8″ from the case for 5 seconds  
T
L
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle  
10%.  
(2) Proper strike and creepage distance must be provided.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
SCANSWITCH and SWITCHMODE are trademarks of Motorola Inc.  
REV 2  
Motorola, Inc. 1996
12345678

中文翻译

下载PDF

与MJW16212相关器件

型号 品牌 获取价格 描述 数据表
MJW18020 ONSEMI

获取价格

 		NPN Silicon Power Transistors High Voltage Planar
MJW18020_10 ONSEMI

获取价格

 		NPN Silicon Power Transistors High Voltage Planar
MJW18020G ONSEMI

获取价格

 		NPN Silicon Power Transistors High Voltage Planar
MJW21191 ISC

获取价格

 		isc Silicon PNP Power Transistor
MJW21191 SAVANTIC

获取价格

 		Silicon PNP Power Transistors
MJW21191 MOTOROLA

获取价格

 		8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS
MJW21191 ONSEMI

获取价格

 		POWER TRANSISTORS COMPLEMENTARY SILICON
MJW21191 NJSEMI

获取价格

 		Trans GP BJT PNP 150V 8A 3-Pin(3+Tab) TO-247 Rail
MJW21191G ONSEMI

获取价格

 		8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W
MJW21192 MOTOROLA

获取价格

 		8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS

与MJW16212相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证