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MJW21193 PDF预览

MJW21193

更新时间: 2024-11-12 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 79K
描述
Silicon Power Transistors

MJW21193 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-247包装说明:CASE 340L-02, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.24
外壳连接:ISOLATED最大集电极电流 (IC):16 A
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):8JEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

MJW21193 数据手册

 浏览型号MJW21193的Datasheet PDF文件第2页浏览型号MJW21193的Datasheet PDF文件第3页浏览型号MJW21193的Datasheet PDF文件第4页浏览型号MJW21193的Datasheet PDF文件第5页浏览型号MJW21193的Datasheet PDF文件第6页浏览型号MJW21193的Datasheet PDF文件第7页 
MJW21193 (PNP)  
MJW21194 (NPN)  
Preferred Devices  
Silicon Power Transistors  
The MJW21193 and MJW21194 utilize Perforated Emitter  
technology and are specifically designed for high power audio output,  
disk head positioners and linear applications.  
http://onsemi.com  
Total Harmonic Distortion Characterized  
High DC Current Gain –  
16 AMPERES  
COMPLEMENTARY  
SILICON POWER  
TRANSISTORS  
250 VOLTS  
h
FE  
= 20 Min @ I = 8 Adc  
C
Excellent Gain Linearity  
High SOA: 2.25 A, 80 V, 1 Second  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
250  
400  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
200 WATTS  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector–Emitter Voltage – 1.5 V  
V
CEO  
V
CBO  
V
EBO  
V
CEX  
400  
Collector Current – Continuous  
Collector Current – Peak (Note 1)  
I
C
16  
30  
1
2
3
TO–247  
CASE 340K  
STYLE 3  
Base Current – Continuous  
I
B
5.0  
Adc  
Total Power Dissipation @ T = 25°C  
Derate Above 25°C  
P
D
200  
1.43  
Watts  
W/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
ā65 to  
+150  
°C  
J
stg  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MJW  
2119x  
LLYWW  
Thermal Resistance,  
Junction to Case  
R
0.7  
°C/W  
θJC  
Thermal Resistance,  
Junction to Ambient  
R
40  
°C/W  
θJA  
1 BASE  
2 COLLECTOR  
MJW2119x= Device Code  
3 EMITTER  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
x
= 3 or 4  
LL  
Y
= Location Code  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
Device  
Package  
TO–247  
TO–247  
Shipping  
MJW21193  
MJW21194  
30 Units/Rail  
30 Units/Rail  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
March, 2002 – Rev. 1  
MJW21193/D  

MJW21193 替代型号

型号 品牌 替代类型 描述 数据表
MJW21193G ONSEMI

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