生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.3 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 150 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 5 | JEDEC-95代码: | TO-247AE |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 100 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJW21191G | ONSEMI |
获取价格 |
8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W | |
MJW21192 | MOTOROLA |
获取价格 |
8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS | |
MJW21192 | ONSEMI |
获取价格 |
POWER TRANSISTORS COMPLEMENTARY SILICON | |
MJW21192 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
MJW21192 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
MJW21192_05 | ONSEMI |
获取价格 |
8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W | |
MJW21192G | ONSEMI |
获取价格 |
8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W | |
MJW21193 | ONSEMI |
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Silicon Power Transistors | |
MJW21193 | FOSHAN |
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TO-3P | |
MJW21193_05 | ONSEMI |
获取价格 |
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W |