Datasheet > MJW21191

MJW21191

更新时间： 2024-11-13 10:55:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	92K
描述
isc Silicon PNP Power Transistor

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中文翻译

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技术参数
数据手册

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MJW21191 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

MJW21191 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

MJW21191

DESCRIPTION

·DC Current Gain

·High Area of Safe Operation

APPLICATIONS

·Designed for power audio output, or high power drivers in

audio amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-150

-5

UNIT

Collector Current-Continuous

Collector Current-Pulsed

Base Current-Continuous

Total Power Dissipation (T_C=25℃)

Junction Temperature

-8

I_CM

-16

I_B

-2

P_D

100

℃

150

T_j

Storage Temperature

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

ThermalResistance Junction To Case

0.65

℃/W

R_{th j-C}

isc Website：www.iscsemi.cn

中文翻译

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