Datasheet > MJW16206

MJW16206

更新时间： 2024-11-23 10:55:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	119K
描述
Silicon NPN Power Transistors

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MJW16206 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJW16206

DESCRIPTION

·With TO-247 package

·High voltage ,high speed

·Low collector saturation voltage

APPLICATIONS

·Designed for use in horizontal deflection

circuits for high and very high resolution,

monochrome and color CRT monitors

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-247) and symbol

Emitter

ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

1200

500

UNIT

Open emitter

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

5.0

I_BM

Base current-peak

T_C=25ꢀ

T_C=100ꢀ

150

P_D

Total power dissipation

Junction temperature

Storage temperature

ꢀ

150

T_j

-55~150

ꢀ

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Thermal resistance junction to case

0.67

ꢀ/W

R_{th j-C}

12 3

中文翻译

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