Datasheet > MJW16110

MJW16110

更新时间： 2024-11-22 22:30:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	416K
描述
NPN Silicon Power Transistors

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MJW16110 数据手册

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SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

POWER TRANSISTORS

15 AMPERES

SWITCHMODE Bridge Series

400 VOLTS

. . . specifically designed for use in half bridge and full bridge off line converters.

175 AND 135 WATTS

•

Excellent Dynamic Saturation Characteristics

Rugged RBSOA Capability

Collector–Emitter Sustaining Voltage — V

Collector–Emitter Breakdown — V

(BR)CES

— 400 V

CEO(sus)

— 650 V

State–of–Art Bipolar Power Transistor Design

Fast Inductive Switching:

t = 25 ns (Typ) @ 100 C

t = 50 ns (Typ) @ 100 C

= 1 µs (Typ) @ 100 C

•

Ultrafast FBSOA Specified

100 C Performance Specified for:

RBSOA

Inductive Load Switching

Saturation Voltages

Leakages

MAXIMUM RATINGS

Rating

Symbol

MJ16110

MJW16110

400

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO(sus)

650

CES

EBO

CASE 1–07

TO–204AA

(FORMERLY TO–3)

MJ16110

Collector Current — Continuous

— Pulsed (1)

Base Current — Continuous

— Pulsed (1)

Adc

Total Power Dissipation

@ T = 25 C

175

100

135

1.09

Watts

@ T = 100 C

Derated above 25 C

W/ C

Operating and Storage Temperature

T , T

–65 to 200 –55 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance —

Junction to Case

0.92

C/W

θJC

CASE 340F–03

TO–247AE

MJW16110

Maximum Lead Temperature for

Soldering Purposes 1/8″ from Case

for 5 Seconds

275

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola Inc.

REV 1

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