MJW16206

更新时间： 2024-11-26 10:55:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	42K
描述
Silicon NPN Power Transistors

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中文翻译

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技术参数
数据手册

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MJW16206 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

MJW16206 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJW16206

DESCRIPTION

·With TO-247 package

·High voltage ,high speed

·Low collector saturation voltage

APPLICATIONS

·Designed for use in horizontal deflection

circuits for high and every high resolution,

monochrome and color CRT monitors

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-247) and symbol

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

1200

500

UNIT

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

5.0

I_BM

Base current-peak

T_C=25℃

T_C=100℃

150

P_D

Total power dissipation

Junction temperature

Storage temperature

℃

T_j

150

T_stg

-55~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-C}

0.67

℃/W

12 3

中文翻译

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