Datasheet > MJE800

MJE800

更新时间： 2024-11-25 22:33:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	54K
描述
Monolithic Construction With Built-in Base- Emitter Resistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJE800 数据手册

MJE800/801/802/803

Monolithic Construction With Built-in Base-

Emitter Resistors

FE C

Complement to MJE700/701/702/703

•

High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Value

Units

Collector- Base Voltage

: MJE800/801

: MJE802/803

CBO

Collector-Emitter Voltage

: MJE800/801

: MJE802/803

CEO

Emitter-Base Voltage

Collector Current

Base Current

EBO

0.1

Collector Dissipation (T =25°C)

R1 10 k Ω

R2 0.6 k Ω

Junction Temperature

Storage Temperature

150

°C

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

I = 50mA, I = 0

Min.

Max. Units

Collector-Emitter Breakdown Voltage

: MJE800/801

CEO

: MJE802/803

Collector Cut-off Current

: MJE800/801

CEO

= 60V, I = 0

100

µA

: MJE802/803

= 80V, I = 0

Collector Cut-off Current

= Rated BV

, I = 0

100

500

µA

CBO

CEO

, I = 0

= 100°C

Emitter Cut-off Current

= 5V, I = 0

EBO

DC Current Gain : MJE800/802

: MJE801/803

= 3V, I = 1.5A

750

100

= 3V, I = 2A

: ALL DEVICES

= 3V, I = 4A

(sat)

(on)

Collector-Emitter Saturation Voltage

: MJE800/802

= 1.5A, I = 30mA

2.5

2.8

: MJE801/803

: ALL DEVICES

= 2A, I = 40mA

= 4A, I = 40mA

Base-Emitter ON Voltage

: MJE800/802

= 3V, I = 1.5A

2.5

: MJE801/803

: ALL DEVICES

= 3V, I = 2A

= 3V, I = 4A

Rev. A1, February 2001

12 3 4

中文翻译

下载PDF

与MJE800相关器件

型号	品牌	获取价格	描述	数据表
MJE800G	ROCHESTER	获取价格	4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN
MJE800G	ONSEMI	获取价格	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE800LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE800STU	ONSEMI	获取价格	4.0 A, 60 V NPN Darlington Bipolar Power Transistor, 1920-TUBE
MJE800STU	FAIRCHILD	获取价格	NPN Epitaxial Silicon Darlington Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU,
MJE800T	ONSEMI	获取价格	DARLINGTON POWER TRANSISTORS COMPLEMENTARY
MJE800T	MOSPEC	获取价格	POWER TRANSISTORS(4.0A,60-80V,40W)
MJE800T	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
MJE800T	MOTOROLA	获取价格	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
MJE800T	NJSEMI	获取价格	Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-220 Box