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MJE5850U PDF预览

MJE5850U

更新时间: 2024-11-02 13:11:35
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
8页 304K
描述
8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB

MJE5850U 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP功耗环境最大值:80 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):2500 nsBase Number Matches:1

MJE5850U 数据手册

 浏览型号MJE5850U的Datasheet PDF文件第2页浏览型号MJE5850U的Datasheet PDF文件第3页浏览型号MJE5850U的Datasheet PDF文件第4页浏览型号MJE5850U的Datasheet PDF文件第5页浏览型号MJE5850U的Datasheet PDF文件第6页浏览型号MJE5850U的Datasheet PDF文件第7页 
Order this document  
by MJE5850/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
8 AMPERE  
PNP SILICON  
POWER TRANSISTORS  
300, 350, 400 VOLTS  
80 WATTS  
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-  
age, high–speed, power switching in inductive circuits where fall time is critical. They  
are particularly suited for line operated switchmode applications such as:  
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
Deflection Circuits  
Fast Turn–Off Times  
100 ns Inductive Fall Time @ 25 C (Typ)  
125 ns Inductive Crossover Time @ 25°C (Typ)  
Operating Temperature Range 65 to +150 C  
100 C Performance Specified for:  
Reversed Biased SOA with Inductive Loads  
Switching Times with Inductive Loads  
Saturation Voltages  
CASE 221A–06  
TO–220AB  
Leakage Currents  
MAXIMUM RATINGS  
Rating  
Symbol  
MJE5850  
300  
MJE5851  
350  
MJE5852  
400  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
CEO(sus)  
V
CEV  
350  
400  
450  
V
EB  
6.0  
Collector Current — Continuous  
Peak (1)  
I
C
8.0  
1 6  
I
CM  
Base Current — Continuous  
Peak (1)  
I
4.0  
8.0  
Adc  
B
I
BM  
Total Power Dissipation  
P
80  
Watts  
D
@ T = 25 C  
C
Derate above 25 C  
0.640  
W/ C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to 150  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.25  
275  
Unit  
C/W  
C
Thermal Resistance, Junction to Case  
R
θJC  
Maximum Lead Temperature for Soldering  
Purposes: 1/8from Case for 5 Seconds  
T
L
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Motorola, Inc. 1995

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