生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.75 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 8 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
功耗环境最大值: | 80 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 2500 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE5850UA | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5850W | MOTOROLA |
获取价格 |
8A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
MJE5850WD | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5851 | MOTOROLA |
获取价格 |
8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS | |
MJE5851 | ONSEMI |
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PNP SILICON POWER TRANSISTORS | |
MJE5851 | NJSEMI |
获取价格 |
Trans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail | |
MJE585116 | MOTOROLA |
获取价格 |
8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
MJE585116A | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5851A | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
MJE5851AF | MOTOROLA |
获取价格 |
8A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB |