MJE2361TU

更新时间： 2024-11-02 13:02:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
4页	101K
描述
Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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技术参数
数据手册

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MJE2361TU 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.5 A
集电极-发射极最大电压：	350 V	配置：	SINGLE
最小直流电流增益 (hFE)：	40	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	功耗环境最大值：	30 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	10 MHz	Base Number Matches：	1

MJE2361TU 数据手册

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by MJE2360T/D

SEMICONDUCTOR TECHNICAL DATA

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

. . . useful for general–purpose, high voltage applications requiring high f .

•

Collector–Emitter Sustaining Voltage —

= 350 Vdc (Min) @ I = 2.5 mAdc

350 VOLTS

30 WATTS

CEO(sus)

DC Current Gain —

= 40 (Min) @ I = 100 mAdc — MJE2361T

Current–Gain–Bandwidth Product —

= 10 MHz (Typ) @ I = 50 mAdc

MAXIMUM RATINGS

Rating

Symbol

Value

350

375

6.0

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Base Current

CEO

CASE 221A–06

TO–220AB

0.5

0.25

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.24

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

4.167

C/W

5.0

100

120

140

160

, CASE TEMPERATURE (°C)

Figure 1. Power–Temperature Derating Curve

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

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