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MJB45H11T4G PDF预览

MJB45H11T4G

更新时间： 2024-11-04 03:49:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 64K
描述
Complementary Power Transistors D2PAK for Surface Mount

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中文翻译

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MJB45H11T4G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：LEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.75Factory Lead Time：1 week
风险等级：0.86外壳连接：COLLECTOR
最大集电极电流 (IC)：10 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：40
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：50 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：40 MHz
Base Number Matches：1

MJB45H11T4G 数据手册

 浏览型号MJB45H11T4G的Datasheet PDF文件第2页浏览型号MJB45H11T4G的Datasheet PDF文件第3页浏览型号MJB45H11T4G的Datasheet PDF文件第4页浏览型号MJB45H11T4G的Datasheet PDF文件第5页浏览型号MJB45H11T4G的Datasheet PDF文件第6页 
MJB44H11 (NPN),  
MJB45H11 (PNP)  
Preferred Devices  
Complementary  
Power Transistors  
D2PAK for Surface Mount  
http://onsemi.com  
Complementary power transistors are for general purpose power  
amplification and switching such as output or driver stages in  
applications such as switching regulators, converters and power  
amplifiers.  
SILICON POWER  
TRANSISTORS  
10 AMPERES,  
Features  
80 VOLTS, 50 WATTS  
• Low Collector−Emitter Saturation Voltage −  
MARKING  
DIAGRAM  
V
CE(sat)  
= 1.0 V (Max) @ 8.0 A  
• Fast Switching Speeds  
• Complementary Pairs Simplifies Designs  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
2
D PAK  
B4xH11G  
AYWW  
CASE 418B  
STYLE 1  
• ESD Ratings:  
Human Body Model, 3B > 8000 V  
Machine Model, C > 400 V  
• Pb−Free Packages are Available  
x
A
Y
= 4 or 5  
= Assembly Location  
= Year  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
WW = Work Week  
G
V
CEO  
= Pb−Free Package  
V
5
EB  
Collector Current − Continuous  
− Peak  
I
10  
20  
Adc  
C
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Total Power Dissipation  
P
D
D
2
@ T = 25°C  
C
50  
1.67  
W
W/°C  
MJB44H11  
D PAK  
50 Units/Rail  
50 Units/Rail  
Derate above 25°C  
2
MJB44H11G  
D PAK  
Total Power Dissipation  
P
(Pb−Free)  
@ T = 25°C  
A
2.0  
0.016  
W
W/°C  
2
Derate above 25°C  
MJB44H11T4  
D PAK  
800/Tape & Reel  
800/Tape & Reel  
2
MJB44H11T4G  
D PAK  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to 150  
°C  
stg  
(Pb−Free)  
2
MJB45H11  
D PAK  
50 Units/Rail  
50 Units/Rail  
THERMAL CHARACTERISTICS  
2
Characteristic  
Symbol  
Max  
2.5  
75  
Unit  
°C/W  
°C/W  
MJB45H11G  
D PAK  
(Pb−Free)  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
2
MJB45H11T4  
D PAK  
800/Tape & Reel  
800/Tape & Reel  
R
q
JA  
2
MJB45H11T4G  
D PAK  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 2  
MJB44H11/D  
123456

中文翻译

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MJB45H11T4G 替代型号

型号 品牌 替代类型 描述 数据表
NJVMJB45H11T4G ONSEMI

类似代替

 Complementary Power Transistors
MJB45H11G ONSEMI

类似代替

 Complementary Power Transistors D2PAK for Surface Mount
MJB45H11 ONSEMI

类似代替

 Complementary Power Transistors

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