Datasheet > MJD112

MJD112

更新时间： 2024-11-08 02:54:23

品牌	Logo	应用领域
CDIL		开关光电二极管晶体管
页数	文件大小	规格书
6页	90K
描述
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

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中文翻译

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数据手册

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MJD112 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

MJD112 NPN

MJD117 PNP

DPAK (TO-252)

Plastic Package

Designed for General Purpose Power and Switching Applications

ABSOLUTE MAXIMUM RATINGS

VALUE

DESCRIPTION

SYMBOL

UNIT

V_CBO

100

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Peak

V_CEO

V_EBO

I_C

I_B

Base Current

Total Power Dissipation T_c=25ºC

P_D

0.16

W/ºC

Derate Above 25ºC

Total Power Dissipation T_a=25ºC

Derate Above 25ºC

P_D

1.75

0.014

Operating and Storage Junction

Temperature Range

T_j,T_stg

- 65 to +150

ºC

THERMAL CHARACTERISTICS

Junction to Case

R_{th (j-c)}

6.25

71.4

ºC/W

*R_{th (j-a)}

Junction to Ambient in free air

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

**V_CEO(sus)

I_CEO

TEST CONDITION

I_C=30mA, I_B=0

V_CE=50V, I_B=0

MIN TYP MAX

100

UNIT

Collector Emitter Sustaining Voltage

Collector Cut Off Current

2.0

I_CBO

V_CB=100V, I_E=0

V_CB=80V, I_E=0

V_EB=5V, I_C=0

I_EBO

I_CEX

Emitter Cut Off Current

Collector Cut Off Current

V_CE=80V, V_{BE (off)}=1.5V

V_CE=80V, V_{BE (off)}=1.5V,

T_c=125ºC

500

h_FE

I_C=0.5A, V_CE=3V

I_C=2A, V_CE=3V

I_C=4A, V_CE=3V

500

1000

200

DC Current Gain

12000

*These rating are applicable when surface mounted on the minimum pad sizes recommended

**Pulse Test:- Pulse Width < 300ms, Duty Cycle < 2%

MJD112_117 Rev220904E

Data Sheet

Page 1 of 6

Continental Device India Limited

12 3 4 5 6

中文翻译

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