Datasheet > MJD112_03

MJD112_03

更新时间： 2024-11-04 03:49:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
6页	251K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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中文翻译

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数据手册

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MJD112_03 数据手册

MJD112

MJD117

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

■

STMicroelectronics PREFERRED

SALESTYPES

■

LOW BASE-DRIVE REQUIREMENTS

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX "T4")

■

ELECTRICAL SIMILAR TO TIP112 AND

TIP117

APPLICATIONS

DPAK

TO-252

(Suffix "T4")

■

GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD112 and MJD117 form complementary

PNP - NPN pairs.

They are manufactured using Epitaxial Base

technology for cost-effective performance.

INTERNAL SCHEMATIC DIAGRAM

R1(typ) = 7KΩ

R2(typ) = 200Ω

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

100

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

0.05

P_tot

Total Dissipation at T_c= 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

For PNP type voltage and current values are negative.

1/6

January 2003

12 3 4 5 6

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