Datasheet > MJD112_06

MJD112_06

更新时间： 2024-11-04 03:49:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管达林顿晶体管
页数	文件大小	规格书
5页	159K
描述
NPN Silicon Darlington Transistor

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MJD112_06 数据手册

November 2006

MJD112

NPN Silicon Darlington Transistor

Features

•

High DC Current Gain

Built-in a Damper Diode at E-C

Lead Formed for Surface Mount Applications (No Suffix)

Equivalent Circuit

D-PAK

1.Base 2.Collector 3.Emitter

R1 ≅ 10kΩ

R2 ≅ 0.6kΩ

Absolute Maximum Ratings* T_a= 25°C unless otherwise noted

Symbol

Parameter

Value

100

Units

V_CBO

Collector-Base Voltage

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

I_CP

I_B

P_C

Collector Dissipation (T_C=25°C)

Collector Dissipation (T_a=25°C)

Junction Temperature

Storage Temperature

1.75

150

T_J

°C

T_STG

- 65 ~ 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics* T_a=25°C unless otherwise noted

Symbol

V_CEO(sus)

I_CEO

Parameter

Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Max.

Units

I_C= 30mA, I_B= 0

V_CE= 50V, I_B= 0

V_CB= 100V, I_B= 0

V_EB= 5V, I_C= 0

100

µA

I_CBO

I_EBO

h_FE

* DC Current Gain

V_CE= 3V, I_C= 0.5A

V_CE= 3V, I_C= 2A

V_CE= 3V, I_C= 4A

500

1000

200

12K

V_CE(sat)

* Collector-Emitter Saturation Voltage

I_C= 2A, I_B= 8mA

I_C= 4A, I_B= 40mA

V_BE(sat)

V_BE(on)

f_T

* Base-Emitter Saturation Voltage

* Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

I_C= 4A, I_B= 40mA

V_CE= 3A, I_C= 2A

V_CE= 10V, I_C= 0.75A

2.8

MHz

C_ob

V_CB= 10V, I_E= 0

f = 0.1MHz

100

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

MJD112 Rev. B

www.fairchildsemi.com

12 3 4 5

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