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MJB6488

更新时间： 2024-11-04 14:53:43
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
6页 63K
描述
15A, 80V, NPN, Si, POWER TRANSISTOR, CASE 418B-04, D2PAK-3

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中文翻译

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MJB6488 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95Factory Lead Time：1 week
风险等级：5.44外壳连接：COLLECTOR
最大集电极电流 (IC)：15 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：5
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：NPN最大功率耗散 (Abs)：75 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：5 MHz
Base Number Matches：1

MJB6488 数据手册

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MJB6488, MJB6491  
Product Preview  
Complementary Silicon  
Plastic Power Transistors  
. . . designed for use in general−purpose amplifier and switching  
applications.  
http://onsemi.com  
• DC Current Gain Specified to 15 A −  
h
FE  
= 20 − 150 @ I = 5.0 Adc  
C
15 A  
= 5.0 (Min) @ I = 15 Adc  
C
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80 V, 75 W  
• Collector−Emitter Sustaining Voltage −  
= 80 Vdc (Min)  
V
CEO(sus)  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model; 3B, >8000 V,  
Machine Model; C, >400 V  
MARKING  
DIAGRAM  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
Base Current  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
JB64xx  
V
CEO  
2
D PAK  
AYWW  
V
CB  
90  
CASE 418B  
STYLE 1  
V
EB  
5.0  
15  
I
C
I
B
5.0  
xx  
A
Y
= 88 or 91  
= Assembly Location  
= Year  
Total Power Dissipation @ T = 25°C  
P
D
75  
0.6  
W
W/°C  
C
Derate above 25°C  
WW  
= Work Week  
Total Power Dissipation @ T = 25°C  
P
D
1.8  
W
A
Derate above 25°C  
0.014  
W/°C  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to  
+150  
°C  
J
stg  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristic  
2
MJB6488  
D PAK  
50 Units / Rail  
Symbol  
Max  
1.67  
70  
Unit  
°C/W  
°C/W  
2
MJB6488T4  
MJB6491  
D PAK  
800 / Tape & Reel  
50 Units / Rail  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
2
D PAK  
R
q
2
MJB6491T4  
D PAK  
800 / Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. P0  
MJB6488/D  
123456

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