是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | DPAK-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.15 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 200 | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 20 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD112T4 | STMICROELECTRONICS |
功能相似 |
Complementary power Darlington transistors | |
MJD112T4 | MOTOROLA |
功能相似 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS | |
MJD112 | MOTOROLA |
功能相似 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD112 TO-252 | BL Galaxy Electrical |
获取价格 |
100V,2A,General Purpose NPN Bipolar Transistor | |
MJD112_03 | STMICROELECTRONICS |
获取价格 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |
MJD112_06 | ONSEMI |
获取价格 |
Complementary Darlington Power Transistors | |
MJD112_06 | FAIRCHILD |
获取价格 |
NPN Silicon Darlington Transistor | |
MJD112_10 | STMICROELECTRONICS |
获取价格 |
Complementary power Darlington transistors | |
MJD112_11 | ONSEMI |
获取价格 |
Complementary Darlington Power Transistors | |
MJD112-001 | ONSEMI |
获取价格 |
Complementary Darlington Power Transistors | |
MJD112-001G | ONSEMI |
获取价格 |
2A, 100V, NPN, Si, POWER TRANSISTOR, LEAD FREE, CASE 369D-01, DPAK-3 | |
MJD1121 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS | |
MJD112-1 | MOTOROLA |
获取价格 |
2A, 100V, NPN, Si, POWER TRANSISTOR |