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MH16S64PFC-8 PDF预览

MH16S64PFC-8

更新时间: 2024-02-15 18:10:43
品牌 Logo 应用领域
三菱 - MITSUBISHI 存储内存集成电路动态存储器时钟
页数 文件大小 规格书
55页 580K
描述
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM

MH16S64PFC-8 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM144,32针数:144
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.32风险等级:5.56
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N144内存密度:1073741824 bit
内存集成电路类型:SYNCHRONOUS DRAM MODULE内存宽度:64
功能数量:1端口数量:1
端子数量:144字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX64输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM144,32封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY电源:3.3 V
认证状态:Not Qualified刷新周期:4096
自我刷新:YES最大待机电流:0.008 A
子类别:DRAMs最大压摆率:1.6 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:0.8 mm
端子位置:DUALBase Number Matches:1

MH16S64PFC-8 数据手册

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Preliminary Spec.  
MITSUBISHI LSIs  
Some contents are subject to change without notice.  
MH16S64PFC -7,-7L,-8,-8L,-10,-10L  
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM  
DESCRIPTION  
Utilizes industry standard 8M x 16 Synchronous DRAMs  
The MH16S64PFC is 16777216 - word by 64-bit  
Synchronous DRAM module. This consists of eight  
industry standard 8Mx16 Synchronous DRAMs in  
TSOP and one industory standard EEPROM in  
TSSOP.  
TSOP and industry standard EEPROM in TSSOP  
144-pin (72-pin dual in-line package)  
single 3.3V±0.3V power supply  
The mounting of TSOP on a card edge Dual Inline  
package provides any application where high  
densities and large quantities of memory are  
required.  
This is a socket type - memory modules, suitable for  
easy interchange or addition of modules.  
Clock frequency 100MHz(max.)  
Fully synchronous operation referenced to clock rising  
edge  
4 bank operation controlled by BA0,1(Bank Address)  
/CAS latency- 2/3(programmable)  
Burst length- 1/2/4/8/Full Page(programmable)  
Burst type- sequential / interleave(programmable)  
Column access - random  
FEATURES  
CLK Access Time  
Frequency  
(Component SDRAM)  
-7,-7L  
-8,-8L  
6.0ns(CL=3)  
6.0ns(CL=3)  
100MHz  
100MHz  
Auto precharge / All bank precharge controlled by A10  
Auto refresh and Self refresh  
100MHz  
8.0ns(CL=3)  
-10,-10L  
4096 refresh cycle /64ms  
PC100 Compliant  
LVTTL Interface  
APPLICATION  
main memory or graphic memory in computer systems  
PCB Outline  
(Front)  
(Back)  
1
2
143  
144  
MITSUBISHI  
ELECTRIC  
MIT-DS-0293-0.0  
21.Dec.1998  
( 1 / 55 )  

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