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MH16S72ABGA-7 PDF预览

MH16S72ABGA-7

更新时间: 2024-09-25 21:13:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 时钟动态存储器内存集成电路
页数 文件大小 规格书
13页 151K
描述
Synchronous DRAM Module, 16MX72, 6ns, CMOS, PBGA124, BGA-124

MH16S72ABGA-7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA, BGA124,12X22,50
针数:124Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.92访问模式:DUAL BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
JESD-30 代码:R-PBGA-B124JESD-609代码:e0
长度:32 mm内存密度:1207959552 bit
内存集成电路类型:SYNCHRONOUS DRAM MODULE内存宽度:72
功能数量:1端口数量:1
端子数量:124字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX72输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA124,12X22,50封装形状:RECTANGULAR
封装形式:GRID ARRAY峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:8192座面最大高度:5.8 mm
自我刷新:YES最大待机电流:0.005 A
子类别:DRAMs最大压摆率:0.85 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:18 mm
Base Number Matches:1

MH16S72ABGA-7 数据手册

 浏览型号MH16S72ABGA-7的Datasheet PDF文件第2页浏览型号MH16S72ABGA-7的Datasheet PDF文件第3页浏览型号MH16S72ABGA-7的Datasheet PDF文件第4页浏览型号MH16S72ABGA-7的Datasheet PDF文件第5页浏览型号MH16S72ABGA-7的Datasheet PDF文件第6页浏览型号MH16S72ABGA-7的Datasheet PDF文件第7页 
Preliminary Spec.  
MITSUBISHI LSIs  
Some contents are subject to change without notice.  
MH16S72ABGA-5,-6,-7  
1207959552-BIT (166777216 - WORD BY 72-BIT)SynchronousDRAM  
PIN CONFIGURATION ( TOP VIEW )  
A
M
DESCRIPTION  
1
The MH16S72ABGA is an 16M word by 72-bit  
Sy nchronous DRAM module.This consists of f iv e  
industry standard 16M X 16 Sy nchronous DRAMs  
in STSOP.  
The ICs are mounted on both sides of Similar  
FR-5 with BGA package.  
FEATURES  
CLK Access Time  
Frequency  
Type name  
12  
(Component SDRAM)  
MH16S72ABGA-5  
MH16S72ABGA-6  
MH16S72ABGA-7  
133MHz  
133MHz  
100MHz  
5.4ns(CL=2)  
5.4ns(CL=3)  
6ns(CL=2)  
L M  
G H J K  
C D E F  
A B  
1
2
Utilizes industry standard 16M X 16 Synchronous DRAMs in  
STSOP package.  
124 pin BGA (including 4 Dummy pins)  
Single 3.3V +/- 0.3V supply  
3
4
5
6
Clock frequency 100MHz, 133MHz  
7
Fully synchronous operation reference to clock rising edge  
Dual bank operation controlled by BA0,1(Bank Address)  
/CAS latency - 2/3 (programmable)  
Burst length - 1/2/4/8/Full Page (programmable)  
Burst type - sequential / interleave (programmable)  
Column access - random  
8
9
10  
11  
12  
Auto precharge / All bank precharge controlled by A10  
Auto refresh and Self refresh  
8192 refresh cycle / 64ms  
LVTTL Interface  
APPLICATION  
Main memory unit for computers, Microcomputer memory,  
PDA, Refresh memory for CRT  
MITSUBISHI  
ELECTRIC  
MIT-DS-0408-1.1  
11.Jan.2002  
1
(
/ 13 )  

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