Datasheet > MH16S72AMA-8

MH16S72AMA-8

更新时间： 2024-11-19 22:05:39

品牌	Logo	应用领域
三菱 - MITSUBISHI		动态存储器
页数	文件大小	规格书
52页	1044K
描述
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

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数据手册

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MH16S72AMA-8 数据手册

Preliminary Spec.

MITSUBISHI LSIs

Some contents are subject to change without notice.

MH16S72AMA -8,-10,-12

1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

DESCRIPTION

The MH16S72AMA is 16777216 - word by 72-bit

Synchronous DRAM module. This consists of

eighteen industry standard 16Mx4 Synchronous

DRAMs in TSOP and one industory standard

EEPROM in TSSOP.

The mounting of TSOP on a card edge Dual Inline

package provides any application where high

densities and large quantities of memory are

required.

85pin

1pin

This is a socket type - memory modules, suitable for

easy interchange or addition of modules.

94pin

95pin

10pin

11pin

FEATURES

CLK Access Time

Frequency

(Component SDRAM)

-8

6ns(CL=3)

8ns(CL=3)

125MHz

100MHz

-10

8ns(CL=3)

-12

83MHz

124pin

125pin

40pin

41pin

Utilizes industry standard 16M x 4 Synchronous DRAMs

TSOP and industry standard EEPROM in TSSOP

168-pin (84-pin dual in-line package)

single 3.3V±0.3V power supply

Clock frequency 125MHz/100MHz/83MHz

Fully synchronous operation referenced to clock rising

edge

Dual bank operation controlled by BA0,1(Bank Address)

/CAS latency- 2/3(programmable)

Burst length- 1/2/4/8(programmable)

Burst type- sequential / interleave(programmable)

Column access - random

84pin

168pin

Auto precharge / All bank precharge controlled by A10

Auto refresh and Self refresh

4096 refresh cycle /64ms

LVTTL Interface

APPLICATION

main memory or graphic memory in computer systems

MITSUBISHI

ELECTRIC

MIT-DS-0128-0.0

5. Mar.1997

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