Datasheet > MGFC36V3742A_04

MGFC36V3742A_04

更新时间： 2024-11-24 03:39:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	268K
描述
3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET

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MGFC36V3742A_04 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC36V3742A

3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC36V3742A is an internally impedance-matched

GaAs power FET especially designed for use in 3.7 ~ 4.2

GHz band amplifiers.The hermetically sealed metal-ceramic

package guarantees high reliability.

OUTLINE DRAWING Unit : millimeters

21.0 +/-0.3

FEATURES

(1)

Class A operation

0.6 +/-0.15

Internally matched to 50(ohm) system

High output power

(2)

P1dB = 4W (TYP.) @ f=3.7~4.2GHz

High power gain

R-1.6

GLP = 12.5 dB (TYP.) @ f=3.7~4.2GHz

High power added efficiency

P.A.E. = 33 % (TYP.) @ f=3.7~4.2GHz

Low distortion [ item -51 ]

(3)

10.7

IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.

17.0 +/-0.2

APPLICATION

item 01 : 3.7~4.2 GHz band power amplifier

item 51 : 3.7~4.2 GHz band digital radio communication

QUALITY GRADE

12.0

RECOMMENDED BIAS CONDITIONS

VDS = 10(V)

ID = 1.2 (A)

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

GF-8

Rg = 100(ohm) Refer to Bias Procedure

(Ta=25 deg.C)

ABSOLUTE MAXIMUM RATINGS

< Keep safety first in your circuit designs! >

Symbol

VGDO

VGSO

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

-15

Unit

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal injury, fire

or property damage. Remember to give due consideration to

safety when making your circuit designs, with appropriate

measures such as (1)placement of substitutive, auxiliary

circuits, (2)use of non-flammable material or (3)prevention

against any malfunction or mishap.

-15

3.75

-10

IGR

Reverse gate current

Forward gate current

Total power dissipation *1

Channel temperature

Storage temperature

IGF

Tch

175

deg.C

Tstg

-65 / +175

*1 : Tc=25 deg.C

(Ta=25 deg.C)

ELECTRICAL CHARACTERISTICS

Limits

Symbol

Parameter

Test conditions

Unit

Min.

Typ.

Max.

IDSS

Saturated drain current

Transconductance

VDS=3V, VGS=0V

VDS=3V, ID=1.1A

VDS=3V, ID=10mA

3.75

VGS(off)

P1dB

GLP

Gate to source cut-off voltage

Output power at 1dB gain compression

Linear power gain

-4.5

12.5

dBm

VDS=10V, ID(RF off)=1.2A, f=3.7~4.2GHz

Drain current

1.8

P.A.E.

IM3

Power added efficiency

-45

3rd order IM distortion

-42

dBc

deg.C/W

Rth(ch-c) Thermal resistance

Delta Vf method

*1 : item -51, 2 tone test, Po=25dBm Single Carrier Level, f=4.2GHz, Delta f=10MHz

*2 : Channel to case

MITSUBISHI

ELECTRIC

June/2004

12 3

中文翻译

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与MGFC36V3742A_04相关器件

型号	品牌	获取价格	描述	数据表
MGFC36V3742A_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC36V3742A-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC36V4450	MITSUBISHI	获取价格	Transistor,
MGFC36V4450-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC36V4450A	MITSUBISHI	获取价格	4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V4450A_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC36V4450A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC36V5258	MITSUBISHI	获取价格	5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V5258_04	MITSUBISHI	获取价格	5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V5258_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET

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