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| 品牌 | Logo | 应用领域 |
| 三菱 - MITSUBISHI |  |
/ |
| 页数 | 文件大小 | 规格书 |
| 10页 | 333K |  |
| 描述 | ||
| RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-6 | ||
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MGFC1423-T02 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, |
|
| MGFC1423-T03 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, |
|
| MGFC1425-T03 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, |
|
| MGFC1801 | MITSUBISHI |
获取价格 |
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
|
| MGFC1801-A02 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC1801-A11 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC1801-A12 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC1801-T02 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC1801-T03 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC2407-T02 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
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