型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC1801-A02 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFC1801-A11 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFC1801-A12 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFC1801-T02 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFC1801-T03 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFC2407-T02 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFC2407-T03 | MITSUBISHI |
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暂无描述 | |
MGFC2415A | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio | |
MGFC2415-T02 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio | |
MGFC2415-T03 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio |