5秒后页面跳转
| 品牌 | Logo | 应用领域 |
| 三菱 - MITSUBISHI |  |
/ |
| 页数 | 文件大小 | 规格书 |
| 10页 | 333K |  |
| 描述 | ||
| RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-6 | ||
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MGFC1801 | MITSUBISHI |
获取价格 |
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
|
| MGFC1801-A02 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC1801-A11 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC1801-A12 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC1801-T02 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC1801-T03 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC2407-T02 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC2407-T03 | MITSUBISHI |
获取价格 |
暂无描述 |
|
| MGFC2415A | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio |
|
| MGFC2415-T02 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
