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MGFC1423-T03 PDF预览

MGFC1423-T03

更新时间: 2024-11-09 20:52:35
品牌 Logo 应用领域
三菱 - MITSUBISHI 放大器晶体管
页数 文件大小 规格书
10页 333K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, DIE-6

MGFC1423-T03 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:UNCASED CHIP, R-XUUC-N6针数:6
Reach Compliance Code:unknownHTS代码:8541.21.00.40
风险等级:5.84其他特性:LOW NOISE
配置:SINGLE最大漏极电流 (ID):0.08 A
FET 技术:JUNCTION最高频带:KU BAND
JESD-30 代码:R-XUUC-N6元件数量:1
端子数量:6工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
极性/信道类型:N-CHANNEL最小功率增益 (Gp):8 dB
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

MGFC1423-T03 数据手册

 浏览型号MGFC1423-T03的Datasheet PDF文件第2页浏览型号MGFC1423-T03的Datasheet PDF文件第3页浏览型号MGFC1423-T03的Datasheet PDF文件第4页浏览型号MGFC1423-T03的Datasheet PDF文件第5页浏览型号MGFC1423-T03的Datasheet PDF文件第6页浏览型号MGFC1423-T03的Datasheet PDF文件第7页 

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