Datasheet > MDP06N033

MDP06N033

更新时间： 2024-11-07 01:18:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	997K
描述
Single N-channel Trench MOSFET 60V, 120A, 3.3m(ohm)

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MDP06N033 数据手册

MDP06N033

Single N-channel Trench MOSFET 60V, 120A, 3.3mΩ

General Description

Features

The MDP06N033 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDP06N033 is suitable device for Synchronous

Rectification for Server / Adapter and general purpose

applications.



V_DS= 60V

I_D= 120A @V_GS= 10V

R_DS(ON)

< 3.3 mΩ @V_GS= 10V

100% UIL Tested

100% Rg Tested



TO-220

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC (Silicon Limited)

159.8

120.0

101.1

480

Continuous Drain Current ⁽¹⁾

T_C=25^oC (Package Limited)

T_C=100^oC

I_D

Pulsed Drain Current

I_DM

T_C=25^oC

138.9

55.6

Power Dissipation

P_D

T_C=100^oC

Single Pulse Avalanche Energy

E_AS

288

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

0.9

Jun. 2015. Rev. 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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