Datasheet > MDP12N50F

MDP12N50F

更新时间： 2024-11-10 01:22:59

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美格纳 - MGCHIP		/
页数	文件大小	规格书
8页	1389K
描述
N-Channel MOSFET 500V, 11.5A, 0.75ohm

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MDP12N50F 数据手册

MDP12N50F/MDF12N50F

N-Channel MOSFET 500V, 11.5A, 0.75Ω

General Description

Features

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.



V_DS= 500V

I_D= 11.5A

@ V_GS= 10V

R_DS(ON)

≤

0.75Ω @ V_GS= 10V

Applications

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.



Power Supply

PFC

High Current, High Speed Switching

TO-220

TO-220F

MDP Series

MDF Series

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Symbol

MDP12N50

MDF12N50

Unit

Drain-Source Voltage

V_DSS

V_GSS

500

±30

Gate-Source Voltage

T_C=25^oC

T_C=100^oC

.11.5

7.0

11.5*

7.0*

46*

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

I_DM

P_D

T_C=25^oC

165

1.33

W/ ^oC

Derate above 25 ^oC

0.32

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

16.5

4.5

V/ns

460

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

MDP12N50

62.5

MDF12N50

Unit

R_θJA

R_θJC

62.5

3.0

^oC/W

0.75

Jun 2018. Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7 8

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