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MDP13N50 PDF预览

MDP13N50

更新时间: 2024-09-17 01:18:59
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 851K
描述
N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

MDP13N50 数据手册

 浏览型号MDP13N50的Datasheet PDF文件第2页浏览型号MDP13N50的Datasheet PDF文件第3页浏览型号MDP13N50的Datasheet PDF文件第4页浏览型号MDP13N50的Datasheet PDF文件第5页浏览型号MDP13N50的Datasheet PDF文件第6页 
Novꢀ2009.ꢀVersionꢀ2.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
                                                                                                                             
MDP13N50ꢀꢀ  
NꢁChannelꢀMOSFETꢀ500V,ꢀ13.0A,ꢀ0.5ꢀ  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
TheꢀMDP13N50ꢀusesꢀadvancedꢀMagnachipsꢀ  
MOSFETꢀTechnology,ꢀwhichꢀprovidesꢀlowꢀonꢁ  
stateꢀresistance,ꢀhighꢀswitchingꢀperformanceꢀ  
andꢀexcellentꢀquality.ꢀ  
MDP13N50ꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀHIDꢀ  
andꢀgeneralꢀpurposeꢀapplications.ꢀ  
ꢀVDSꢀ=ꢀ500Vꢀ  
ꢀIDꢀ=ꢀ13.0Aꢀ ꢀ @VGSꢀ=ꢀ10Vꢀ  
ꢀRDS(ON)ꢀ<ꢀ0.5ꢀ ꢀ @VGSꢀ=ꢀ10Vꢀ  
Applicationsꢀ  
ꢀPowerꢀSupplyꢀ  
ꢀHIDꢀ  
ꢀLightingꢀ  
ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ  
Characteristicsꢀ  
Symbolꢀ  
VDSS  
VDSSꢀ@ꢀTjmax  
VGSS  
Ratingꢀ  
500ꢀ  
Unitꢀ  
Vꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ@ꢀTjmaxꢀ  
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ  
550ꢀ  
Vꢀ  
±30ꢀ  
Vꢀ  
ꢀ TC=25oCꢀ  
ꢀ TC=100oCꢀ  
13ꢀ  
Aꢀ  
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ  
IDꢀ  
IDM  
PDꢀ  
8.2ꢀ  
Aꢀ  
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)  
ꢀ ꢀ PowerꢀDissipationꢀ  
52ꢀ  
Aꢀ  
ꢀ TC=25oCꢀ  
Derateꢀaboveꢀ25 oCꢀ  
187ꢀ  
Wꢀ  
W/ oCꢀ  
1.49ꢀ  
4.5ꢀ  
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)  
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)  
Dv/dtꢀ  
EAS  
TJ,ꢀTstg  
V/nsꢀ  
mJꢀ  
oC  
580ꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
ꢁ55~150ꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
Unitꢀ  
62.5ꢀ  
0.67ꢀ  
oC/Wꢀ  
1ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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