Datasheet > MDP13N50GTH

MDP13N50GTH

更新时间： 2024-11-07 01:18:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
8页	1506K
描述
N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

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MDP13N50GTH 数据手册

MDP13N50G / MDF13N50G

N-Channel MOSFET 500V, 13.0A, 0.5Ω

General Description

Features

 V_DS= 500V

 V_DS= 550V @ Tjmax

 I_D= 13.0A @ V_GS= 10V

 R_DS(ON)< 0.5Ω @ V_GS= 10V

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.

Applications

 Power Supply

 HID

 Lighting

TO-220

TO-220F

MDP Series

MDF Series

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Symbol

V_DSS

MDP13N50G

MDF13N50G

Unit

Drain-Source Voltage

500

550

±30

Drain-Source Voltage @ Tjmax

Gate-Source Voltage

V_DSS@ T_jmax

V_GSS

T_C=25^oC

8.2

13*

8.2*

52*

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

T_C=100^oC

I_DM

P_D

T_C=25^oC

187

1.49

W/ ^oC

Derate above 25 ^oC

0.33

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

18.7

4.5

V/ns

580

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Symbol

R_θJA

MDP13N50G MDF13N50G

Unit

^oC/W

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

62.5

0.67

62.5

3.0

R_θJC

Dec. 2014. Version 1.6

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7 8

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