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MDP12N50TH PDF预览

MDP12N50TH

更新时间: 2024-09-17 01:18:59
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 772K
描述
N-Channel MOSFET 500V, 11.5 A, 0.65(ohm)

MDP12N50TH 数据手册

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Augꢀ2009.ꢀVersionꢀ3.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
                                                                                                                             
MDP12N50ꢀꢀ  
NꢁChannelꢀMOSFETꢀ500V,ꢀ11.5ꢀA,ꢀ0.65ꢀ  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
Theꢀ MDP12N50ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ  
Technology,ꢀ whichꢀ providesꢀ lowꢀ onꢁstateꢀ resistance,ꢀ highꢀ  
ꢀ  
ꢀ  
ꢀ  
VDSꢀ=ꢀ500Vꢀ  
IDꢀ=ꢀ11.5Aꢀ  
RDS(ON)ꢀ≤ꢀ0.65ꢂꢀ  
@ꢀVGSꢀ=ꢀ10Vꢀ  
@ꢀVGSꢀ=ꢀ10Vꢀ  
switchingꢀperformanceꢀandꢀexcellentꢀquality.ꢀ  
MDP12N50ꢀ isꢀ suitableꢀ deviceꢀ forꢀ SMPS,ꢀ highꢀ Speedꢀ  
Applicationsꢀ  
switchingꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ  
ꢀ  
ꢀ  
ꢀ  
PowerꢀSupplyꢀ  
PFCꢀ  
HighꢀCurrent,ꢀHighꢀSpeedꢀSwitchingꢀ  
ꢀ ꢀ ꢀ ꢀ  
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ  
Characteristicsꢀ  
Symbolꢀ  
VDSS  
VGSS  
Ratingꢀ  
500ꢀ  
Unitꢀ  
Vꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ  
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ  
±30ꢀ  
Vꢀ  
ꢀ TC=25oCꢀ  
ꢀ TC=100oCꢀ  
11.5ꢀ  
7.0ꢀ  
Aꢀ  
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ()ꢀ  
IDꢀ  
IDM  
PDꢀ  
Aꢀ  
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)  
ꢀ ꢀ PowerꢀDissipationꢀ  
46ꢀ  
Aꢀ  
ꢀ TC=25oCꢀ  
165ꢀ  
Wꢀ  
W/ oCꢀ  
Derateꢀaboveꢀ25 oCꢀ  
1.33ꢀ  
4.5ꢀ  
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)  
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)  
Dv/dtꢀ  
EAS  
TJ,ꢀTstg  
V/nsꢀ  
mJꢀ  
oC  
460ꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
ꢁ55~150ꢀ  
ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
62.5ꢀ  
Unitꢀ  
oC/Wꢀ  
0.75ꢀ  
ꢀ ꢀ ꢀ ꢀ  
1ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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