Datasheet > MDP10N027

MDP10N027

更新时间： 2024-11-10 01:19:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	930K
描述
Single N-channel Trench MOSFET 100V, 120A, 2.8m(ohm)

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MDP10N027 数据手册

MDP10N027

Single N-channel Trench MOSFET 100V, 120A, 2.8mΩ

General Description

Features

The MDP10N027 uses advanced MagnaChip’s MOSFET Technology,

which provides high performance in on-state resistance, fast

switching performance, and excellent quality.



V_DS= 100V

I_D= 120A @V_GS= 10V

Very low on-resistance R_DS(ON)

< 2.8 mΩ @V_GS= 10V

100% UIL Tested

These devices can also be utilized in industrial applications

such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter,

and general purpose applications.



100% Rg Tested

TO-220

Absolute Maximum Ratings (T_J= 25 ^oC)

Characteristics

Drain-Source Voltage

Symbol

Rating

100

Unit

V_DSS

V_GSS

Gate-Source Voltage

±20

T_C=25^oC (Silicon Limited)

272

Continuous Drain Current ⁽¹⁾

I_D

T_C=25^oC (Package Limited)

T_C=100^oC (Silicon Limited)

120

192

Pulsed Drain Current ⁽²⁾

Power Dissipation

I_DM

480

T_C=25^oC

416

P_D

T_C=100^oC

208

Single Pulse Avalanche Energy ⁽³⁾

E_AS

512

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~175

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

0.36

Jun 2017. Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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