Datasheet > MDP10N60G

MDP10N60G

更新时间： 2024-11-07 01:18:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
8页	1433K
描述
N-Channel MOSFET 600V, 10A, 0.7(ohm)

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MDP10N60G 数据手册

MDP10N60G/MDF10N60G

N-Channel MOSFET 600V, 10A, 0.7Ω

General Description

Features

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.



V_DS= 600V

V_DS= 660V

I_D= 10A

@ T_jmax

@ V_GS= 10V

R_DS(ON)≤ 0.7Ω

Applications

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.



Power Supply

PFC

High Current, High Speed Switching

TO-220

TO-220F

MDP Series

MDF Series

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Symbol

V_DSS

MDP10N60G MDF10N60G

Unit

Drain-Source Voltage

600

660

±30

Drain-Source Voltage @ Tjmax

Gate-Source Voltage

V_DSS@ T_jmax

V_GSS

T_C=25^oC

6.3

10*

6.3*

40*

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Power Dissipation

I_D

T_C=100^oC

I_DM

P_D

T_C=25^oC

156

1.25

W/ ^oC

Derate above 25 ^oC

0.38

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

15.6

4.5

V/ns

520

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

MDP10N60G MDF10N60G

Unit

62.5

0.8

62.5

2.6

^oC/W

R_θJC

Dec. 2014 Version 1.5

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7 8

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