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MDP08N055TH PDF预览

MDP08N055TH

更新时间: 2024-11-07 17:15:43
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 1111K
描述
PackageTO-220

MDP08N055TH 数据手册

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MDP08N055TH  
Single N-channel Trench MOSFET 80V  
Features  
General Description  
The MDP08N055TH, Magnachips latest generation of MV  
MOSFET Technology, which provides high performance in the  
lowest Rds(on), fast switching performance, and excellent quality.  
VDS = 80V  
ID = 120 A @VGS = 10V  
Very low on-resistance RDS(ON)  
< 5.5 mΩ @VGS = 10V  
175oC operating temperature  
100% UIL Tested  
These devices can also be utilized in industrial applications such  
as Low Power Drives of E-bike, Light electric vehicles, DC/DC  
converter, and general purpose applications  
.
100% Rg Tested  
100% VDS Tested  
D
G
G
D
S
S
TO-220  
Absolute Maximum Ratings (TJ = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
Rating  
80  
Unit  
V
Gate-Source Voltage  
VGSS  
±20  
130  
120  
92  
V
TC=25oC (Silicon Limited)  
TC=25oC (Package Limited)  
Continuous Drain Current (1)  
ID  
A
TC=100oC (Silicon Limited)  
TA=25oC  
15  
Pulsed Drain Current (2)  
IDM  
480  
188  
94  
TC=25oC  
Power Dissipation  
TC=100oC  
TA=25oC  
PD  
W
2.4  
Single Pulse Avalanche Energy (3)  
EAS  
181  
-55~175  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient (1)  
Thermal Resistance, Junction-to-Case  
Symbol  
RθJA  
Rating  
62.5  
Unit  
oC/W  
RθJC  
0.8  
1
Jun. 2021. Ver.1.3  
Magnachip Semiconductor Ltd.  

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