Datasheet > MDP08N055TH

MDP08N055TH

更新时间： 2024-11-10 17:15:43

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1111K
描述
PackageTO-220

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MDP08N055TH 数据手册

MDP08N055TH

Single N-channel Trench MOSFET 80V

Features

General Description

The MDP08N055TH, Magnachip’s latest generation of MV

MOSFET Technology, which provides high performance in the

lowest Rds(on), fast switching performance, and excellent quality.



V_DS= 80V

I_D= 120 A @V_GS= 10V

Very low on-resistance R_DS(ON)

< 5.5 mΩ @V_GS= 10V

175^oC operating temperature

100% UIL Tested



These devices can also be utilized in industrial applications such

as Low Power Drives of E-bike, Light electric vehicles, DC/DC

converter, and general purpose applications

100% Rg Tested

100% △VDS Tested

TO-220

Absolute Maximum Ratings (T_J= 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

Gate-Source Voltage

V_GSS

±20

130

120

T_C=25^oC (Silicon Limited)

T_C=25^oC (Package Limited)

Continuous Drain Current ⁽¹⁾

I_D

T_C=100^oC (Silicon Limited)

T_A=25^oC

Pulsed Drain Current ⁽²⁾

I_DM

480

188

T_C=25^oC

Power Dissipation

T_C=100^oC

T_A=25^oC

P_D

2.4

Single Pulse Avalanche Energy ⁽³⁾

E_AS

181

-55~175

^oC

Junction and Storage Temperature Range

T_J, T_stg

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

0.8

Jun. 2021. Ver.1.3

Magnachip Semiconductor Ltd.

12 3 4 5 6

中文翻译

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