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MCR8D

更新时间： 2024-11-23 20:02:55
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
2页 65K
描述
Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB

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中文翻译

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MCR8D 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
HTS代码：8541.30.00.80风险等级：5.07
外壳连接：ANODE配置：SINGLE
关态电压最小值的临界上升速率：50 V/us最大直流栅极触发电流：15 mA
最大直流栅极触发电压：1 V最大维持电流：30 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0最大漏电流：2 mA
通态非重复峰值电流：80 A元件数量：1
端子数量：3最大通态电压：1.8 V
最大通态电流：8000 A最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：8 A重复峰值关态漏电流最大值：10 µA
断态重复峰值电压：400 V重复峰值反向电压：400 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SCRBase Number Matches：1

MCR8D 数据手册

 浏览型号MCR8D的Datasheet PDF文件第2页 
Order this document  
by MCR8/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola preferred devices  
SCRs  
8 AMPERES RMS  
400 thru 800  
VOLTS  
Designed primarily for half–wave ac control applications, such as motor  
controls, heating controls, and power supplies; or wherever half–wave, silicon  
gate–controlled devices are needed.  
•
•
•
•
•
Blocking Voltage to 800 Volts  
A
On-State Current Rating of 8 Amperes RMS  
High Surge Current Capability — 80 Amperes  
Industry Standard TO–220AB Package for Ease of Design  
Glass Passivated Junctions for Reliability and Uniformity  
K
A
G
CASE 221A–06  
(TO-220AB)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage (1)  
Peak Repetitive Reverse Voltage  
V
DRM  
V
RRM  
Volts  
(T = –40 to 125°C)  
J
MCR8D  
MCR8M  
MCR8N  
400  
600  
800  
On-State RMS Current  
(All Conduction Angles)  
I
8
A
A
T(RMS)  
Peak Non-repetitive Surge Current  
(One Half Cycle, 60 Hz, T = 125°C)  
I
80  
TSM  
J
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
26.5  
5.0  
A sec  
Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)  
P
Watts  
Watts  
A
C
GM  
Average Gate Power (t = 8.3 ms, T = 80°C)  
P
0.5  
C
G(AV)  
Peak Gate Current (Pulse Width ≤ 1.0 µs, T = 80°C)  
I
2.0  
C
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
–40 to +125  
–40 to +150  
°C  
J
T
stg  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
R
2.0  
62.5  
°C/W  
°C  
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds  
NOTE: V andV  
T
260  
L
foralltypescanbeappliedonacontinuousbasis.Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall  
RRM  
DRM  
notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthat  
the voltage ratings of the devices are exceeded.  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995  
12

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与MCR8D相关器件

型号 品牌 获取价格 描述 数据表
MCR8D-AF MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8D-AJ MOTOROLA

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 		8A, 400V, SCR, TO-220AB
MCR8D-AK MOTOROLA

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 		8A, 400V, SCR, TO-220AB
MCR8D-AN MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8D-AU MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8D-BA MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8D-BC MOTOROLA

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 		8A, 400V, SCR, TO-220AB
MCR8D-BD MOTOROLA

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 		8A, 400V, SCR, TO-220AB
MCR8D-BG MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8D-BL MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB

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