MCR8DCM

更新时间： 2024-11-23 04:16:19

品牌	Logo	应用领域
安森美 - ONSEMI		可控硅整流器
页数	文件大小	规格书
5页	61K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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数据手册

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MCR8DCM 数据手册

MCR8DCM, MCR8DCN

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

http://onsemi.com

Features

SCRs

8 AMPERES RMS

600 − 800 VOLTS

• Small Size

• Passivated Die for Reliability and Uniformity

• Low Level Triggering and Holding Characteristics

• Available in Surface Mount Lead Form − Case 369C

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings:

Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• Pb−Free Packages are Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage

DRM,

(Note 1) (T = −40 to 125°C, Sine Wave,

DPAK

CASE 369C

STYLE 4

RRM

50 to 60 Hz, Gate Open)

MCR8DCM

600

800

MCR8DCN

On−State RMS Current

(180° Conduction Angles; T = 105°C)

8.0

5.1

T(RMS)

MARKING DIAGRAM

Average On−State Current

(180° Conduction Angles; T = 105°C)

T(AV)

YWW

8DCxG

Peak Non-Repetitive Surge Current

TSM

(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)

Circuit Fusing Consideration (t = 8.3 msec)

I t

A sec

Forward Peak Gate Power

5.0

(Pulse Width ≤ 1.0 ꢀ sec, T = 105°C)

= Year

= Work Week

Forward Average Gate Power

0.5

2.0

G(AV)

CR8DCx = Device Code

x= M or N

(t = 8.3 msec, T = 105°C)

= Pb−Free Package

Forward Peak Gate Current

(Pulse Width ≤ 1.0 ꢀ sec, T = 105°C)

Operating Junction Temperature Range

Storage Temperature Range

−40 to 125

−40 to 150

°C

PIN ASSIGNMENT

Cathode

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Anode

Gate

Anode

1. V

, V

for all types can be applied on a continuous basis. Ratings apply

DRM RRM

for zero or negative gate voltage; positive gate voltage shall not be applied

concurrent with negative potential on the anode. Blocking voltages shall not

be tested with a constant current source such that the voltage ratings of the

device are exceeded.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

November, 2005 − Rev. 4

MCR8DCM/D

12 3 4 5

中文翻译

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与MCR8DCM相关器件

型号	品牌	获取价格	描述	数据表
MCR8DCM1	ONSEMI	获取价格	SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-252
MCR8DCMT4	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DCMT4G	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DCMT4G	LITTELFUSE	获取价格	该硅控整流器专门用于高容量、低成本的工业和消费应用，例如电机控制、过程控制以及温度、光线和
MCR8DCN	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR8DCN	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DCN1	ONSEMI	获取价格	SILICON CONTROLLED RECTIFIER,800V V(DRM),8A I(T),TO-251
MCR8DCNT4	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DCNT4G	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DCNT4G	LITTELFUSE	获取价格	该硅控整流器专门用于高容量、低成本的工业和消费应用，例如电机控制、过程控制以及温度、光线和

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